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ixgr32n60c.pdf Principales características:

IXGR 32N60C VCE = 600 V HiPerFASTTM IGBT IC25 = 45 A Lightspeed Series VCE(sat) = 2.7 V ISOPLUS247TM package tfi typ = 55 ns (Electrically Isolated Back Side) Preliminary data sheet Symbol Test Conditions Maximum Ratings ISOPLUS 247TM E153432 VCES TJ = 25 C to 150 C 600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V VGES Continuous 20 V G C Isolated Backside* VGEM Transient 30 V E IC25 TC = 25 C45 A IC110 TC = 110 C26 A G = Gate, C = Collector, ICM TC = 25 C, 1 ms 120 A E = Emitter SSOA VGE= 15 V, TVJ = 125 C, RG = 10 ICM = 64 A *Patent pending (RBSOA) Clamped inductive load, L = 100 H @ 0.8 VCES PC TC = 25 C 140 W TJ -55 ... +150 C Features TJM 150 C Tstg -55 ... +150 C DCB Isolated mounting tab Meets TO-247AD package Outline Maximum lead temperature for soldering 300 C High current handling capability 1.6 mm (0.

Keywords - ALL TRANSISTORS. Principales características

 ixgr32n60c.pdf Design, MOSFET, Power

 ixgr32n60c.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixgr32n60c.pdf Database, Innovation, IC, Electricity