ixgt28n60bd1.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

ixgt28n60bd1.pdf Principales características:

Low VCE(sat) IXGH 28N60BD1 VCES = 600 V IGBT with Diode IXGT 28N60BD1 IC25 = 40 A VCE(sat) = 2.0 V Combi Pack Symbol Test Conditions Maximum Ratings TO-268 (IXGT) VCES TJ = 25 C to 150 C 600 V G VCGR TJ = 25 C to 150 C; RGE = 1 M 600 V C (TAB) E VGES Continuous 20 V VGEM Transient 30 V TO-247 AD (IXGH) IC25 TC = 25 C40 A IC90 TC = 90 C28 A ICM TC = 25 C, 1 ms 80 A C (TAB) G C SSOA VGE = 15 V, TVJ = 125 C, RG = 10 ICM = 56 A E (RBSOA) Clamped inductive load @ 0.8 VCES G = Gate, C = Collector, PC TC = 25 C 150 W E = Emitter, TAB = Collector TJ -55 ... +150 C Features TJM 150 C Tstg -55 ... +150 C International standard packages IGBT and anti-parallel FRED in one Md Mounting torque (M3) TO-247 1.13/10 Nm/lb.in. package Maximum lead temperature for soldering 300 C Low VCE(sat) 1.6 mm (0.062 in.) from case for 10 s - fo