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ixta180n055t ixtp180n055t ixtq180n055t.pdf Principales características:

ixta180n055t_ixtp180n055t_ixtq180n055tixta180n055t_ixtp180n055t_ixtq180n055t

Advance Technical Information IXTQ 180N055T VDSS = 55 V Trench Gate IXTA 180N055T ID25 = 180 A Power MOSFET IXTP 180N055T RDS(on) = 4.0 m N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C55 V G VDGR TJ = 25 C to 175 C; RGS = 1 M 55 V D (TAB) S VGSM 20 V TO-220 (IXTP) ID25 TC = 25 C 180 A IDRMS External lead current limit 75 A IDM TC = 25 C, pulse width limited by TJM 600 A IAR TC = 25 C75 A (TAB) G D S EAS TC = 25 C 1.0 J TO-263 (IXTA) dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS, 3 V/ns TJ 150 C, RG = 10 PD TC = 25 C 360 W G TJ -55 ... +175 C S TJM 175 C (TAB) Tstg -55 ... +150 C G = Gate D = Drain TL 1.6 mm (0.062 in.) from case for 10 s 300 C S = Source TAB = Drain Maximum tab temperature for soldering 260 C TO-263 package for 1

 

Keywords - ALL TRANSISTORS. Principales características

 ixta180n055t ixtp180n055t ixtq180n055t.pdf Design, MOSFET, Power

 ixta180n055t ixtp180n055t ixtq180n055t.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ixta180n055t ixtp180n055t ixtq180n055t.pdf Database, Innovation, IC, Electricity

 

 

 


 
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