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ixta180n085t ixtp180n085t.pdf Principales características:

Preliminary Technical Information IXTA180N085T VDSS = 85 V TrenchMVTM IXTP180N085T ID25 = 180 A Power MOSFET RDS(on) 5.5 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-263 (IXTA) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V G VGSM Transient 20 V S (TAB) ID25 TC = 25 C 180 A ILRMS Lead Current Limit, RMS 75 A TO-220 (IXTP) IDM TC = 25 C, pulse width limited by TJM 480 A IAR TC = 25 C25 A EAS TC = 25 C 1.0 J dv/dt IS IDM, di/dt 100 A/ s, VDD VDSS 3 V/ns G (TAB) D TJ 175 C, RG = 5 S PD TC = 25 C 430 W G = Gate D = Drain S = Source TAB = Drain TJ -55 ... +175 C TJM 175 C Features Tstg -55 ... +175 C Ultra-low On Resistance TL 1.6 mm (0.062 in.) from case for 10 s 300 C Unclamped Inductive Swi

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