tip31c.pdf datasheet:

SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50 VCEO Collector-Emitter Voltage 100 V L 1.50 MAX M M M 2.54 VEBO Emitter-Base Voltage 5 V K N 4.70 MAX O 2.60 1 2 3 IC DC 3 P 1.50 MAX Collector Current A J Q 1.50 ICP Pulse 5 _ 1. BASE R 9.50 + 0.20 _ S 8.00 + 0.20 2. COLLECTOR (HEAT SINK) IB Base Current 1 A T 2.90 MAX 3. EMITTER 2 W Ta=25 Collector Power PC Dissipation 40 W Tc=25 TO-220AB Tj Junction Temperature 150 Tstg -55 150 Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 ) CHAR