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2sc3438.pdf Principales características:

SMD Type Transistors NPN Transistors 2SC3438 1.70 0.1 Features High Voltage VCEO = 100V High Collector Current (ICM = 800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SA1368 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 100 Collector - Emitter Voltage VCEO 100 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Peak Collector Current ICM 800 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100 A IE= 0 100 Collector- emitter breakdown voltage VCEO Ic= 1 mA R

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 2sc3438.pdf Design, MOSFET, Power

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