2sc3439.pdf Principales características:

2sc34392sc3439

SMD Type Transistors NPN Transistors 2SC3439 1.70 0.1 Features High hFE hFE=400 to 1800 High collector current Low collector to emitter saturation voltage 0.42 0.1 0.46 0.1 High collector dissipation Pc=500mW Small package for mounting 1.Base Complementary to 2SA1369 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 30 Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 1.5 A Peak Collector Current ICM 3 Collector Power Dissipation PC 500 mW Junction Temperature TJ 150 Storage Temperature Range Tstg -55 to 150 Electrical Characteristics Ta = 25 Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= 100uA IE= 0 30 Collector- emitter breakdo

 

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 2sc3439.pdf Design, MOSFET, Power

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