3dk2222a.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

3dk2222a.pdf Principales características:

3DK2222A(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 2. BASE 5.21 3. COLLECTOR 4.32 2.92 5.33 Features MIN Epitaxial planar die construction 3.43 MIN MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.41 2.67 Symbol Parameter Value Units 3.18 2.03 4.19 VCBO Collector-Base Voltage 75 V 2.67 1.14 VCEO Collector-Emitter Voltage 40 V 1.40 2.03 2.67 VEBO Emitter-Base Voltage 6 V Dimensions in inches and (millimeters) IC Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 Tstg Storage Temperature -55-150 ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified) Parameter Symbol Test conditions MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO IC= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO* IC= 10mA , IB=0 40 V Emitter-base breakdown