Todos los transistores

buz905-06.pdf Principales características:

BUZ905 MAGNA BUZ906 TEC MECHANICAL DATA Dimensions in mm P CHANNEL POWER MOSFET +0.1 25.0 -0.15 8.7 Max. 10.90 0.1 1.50 11.60 POWER MOSFETS FOR Typ. 0.3 AUDIO APPLICATIONS FEATURES 1 2 HIGH SPEED SWITCHING P CHANNEL POWER MOSFET SEMEFAB DESIGNED AND DIFFUSED HIGH VOLTAGE (160V & 200V) R 4.0 0.1 R 4.4 0.2 HIGH ENERGY RATING ENHANCEMENT MODE INTEGRAL PROTECTION DIODE TO 3 N CHANNEL ALSO AVAILABLE AS Pin 1 Gate Pin 2 Drain Case Source BUZ900 & BUZ901 ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C unless otherwise stated) BUZ905 BUZ906 VDSX Drain Source Voltage -160V -200V VGSS Gate Source Voltage 14V ID Continuous Drain Current -8A ID(PK) Body Drain Diode -8A PD Total Power Dissipation @ Tcase = 25 C 125W Tstg Storage Temperature Range 55 to 150 C Tj Maximum Operating Junction T

Keywords - ALL TRANSISTORS. Principales características

 buz905-06.pdf Design, MOSFET, Power

 buz905-06.pdf RoHS Compliant, Service, Triacs, Semiconductor

 buz905-06.pdf Database, Innovation, IC, Electricity