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MXP6006DT Datasheet 60V N-Channel MOSFET Applications a Power Supply VDS RDS(ON)(MAX) ID DC-DC Converters 60V 6m 115A Features Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS Capability Ordering Information Park Number Package Brand MXP6006DT TO-220 MXP Absolute Maximum Ratings TC=25 unless otherwise specified Symbol Parameter Value Unit VDSS Drain-to-Source Voltage 60 V a Continuous Drain Current 115 ID A IDM Pulsed Drain Current @VG=10V 459 Power Dissipation 158 W PD Derating Factor above 25 1.05 W/ VGS Gate-to-Source Voltage +/-20 V Single Pulse Avalanche Energy EAS 449 mJ (L=1mH) IAS Pulsed Avalanche Energy Figure 9 A Tj and Tstg Operating Junction and Storage Temperature Range -55 to 175 Thermal Resistance Symbol Parameter Min Typ Max Unit T

 

Keywords - ALL TRANSISTORS. Principales características

 mxp6006dt.pdf Design, MOSFET, Power

 mxp6006dt.pdf RoHS Compliant, Service, Triacs, Semiconductor

 mxp6006dt.pdf Database, Innovation, IC, Electricity

 

 
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