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2n5031.pdf Principales características:

2n50312n5031

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE (215) 631-9840 FAX (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features Silicon NPN, To-72 packaged VHF/UHF Transistor 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter Maximum Unilateral Gain 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case TO-72 DESCRIPTION General Purpose small-signal, pre-driver, and driver, applications targeted for military and industrial equipment. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol Parameter Value Unit V Collector-Emitter Voltage 10 Vdc CEO V Collector-Base Voltage 15 Vdc CBO V Emitter-Base Voltage 3.0 Vdc EBO I Collector Current 20 mA C Thermal Data P 200 mWatts Total Device Dissipation @ TA = 25 C D 1.14 mW/ C Derate above 25 C MSC1303.PDF 10-25-99 2N5031 ELECTRICAL SPECIFICATIONS (

 

Keywords - ALL TRANSISTORS. Principales características

 2n5031.pdf Design, MOSFET, Power

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 2n5031.pdf Database, Innovation, IC, Electricity

 

 

 


 
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