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2sc4225.pdf Principales características:

2sc42252sc4225

DATA SHEET SILICON TRANSISTOR 2SC4225 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4225 is an NPN silicon epitaxial transistor designed for low in millimeters noise amplifier at VHF through UHF band. 2.1 0.1 It has large dynamic range and good current characteristics. 1.25 0.1 FEATURES 2 Low Noise and High Gain NF = 1.5 dB TYP. at VCE = 10 V, IC = 5 mA, f = 1 GHz 3 1 S21e 2 = 10 dB TYP. at VCE = 10 V, IC = 20 mA, f = 1 GHz (reference value) Marking ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage VCB0 25 V Collector to Emitter Voltage VCE0 12 V Emitter to Base Voltage VEB0 3.0 V Collector Current IC 70 mA Total Power Dissipation PT 160 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C PIN CONNECTIONS 1. Emitter 2. Base

 

Keywords - ALL TRANSISTORS. Principales características

 2sc4225.pdf Design, MOSFET, Power

 2sc4225.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc4225.pdf Database, Innovation, IC, Electricity

 

 
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