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2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Principales características:

2sc5012_2sc5007_2sc4227_2sc3583_2sc3604_2sc4094_ne6812sc5012_2sc5007_2sc4227_2sc3583_2sc3604_2sc4094_ne681

NEC's NPN SILICON HIGH NE681 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 8 GHz LOW NOISE FIGURE 1.2 dB at 1 GHz 1.6 dB at 2 GHz HIGH ASSOCIATED GAIN 15 dB at 1 GHz 12 dB at 2 GHz LOW COST 00 (CHIP) 35 (MICRO-X) DESCRIPTION NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applica- tions. Both the chip and micro-x versions are suitable for 19 (3 PIN ULTRA amplifier applications up to 4 GHz. The NE681 die is also 18 (SOT 343 STYLE) SUPER MINI MOLD) available in six different low cost plastic surface mount pack- age styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain. 33 (SOT 23 STYLE) 30 (SOT 323 STYLE) NOISE FIGURE, GAIN MSG AND MAG vs. FREQUENCY VCE = 3 V, IC = 5

 

Keywords - ALL TRANSISTORS. Principales características

 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Design, MOSFET, Power

 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc5012 2sc5007 2sc4227 2sc3583 2sc3604 2sc4094 ne681.pdf Database, Innovation, IC, Electricity

 

 

 


 
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