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nte3322.pdf Principales características:

NTE3322 Insulated Gate Bipolar Transistor N-Channel Enhancement Mode, High Speed Switch TO3PBL Features D Enhancemnt Mode Type D FRD Included Bwetwen Emitter and Collector D High Speed D Low Saturation Voltage Applications D High Power Switching Absolute Maximum Raings (TA = +25 C unless otherwise specified) Collector-Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900V Gate-Emitter Voltage, VGES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Collector Current, IC DC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60A Pulse (1ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Keywords - ALL TRANSISTORS. Principales características

 nte3322.pdf Design, MOSFET, Power

 nte3322.pdf RoHS Compliant, Service, Triacs, Semiconductor

 nte3322.pdf Database, Innovation, IC, Electricity