nsvbcp69t1g.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

nsvbcp69t1g.pdf Principales características:

BCP69T1G, NSVBCP69T1G PNP Silicon Epitaxial Transistor This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface http //onsemi.com mount applications. Features MEDIUM POWER High Current IC = -1.0 A PNP SILICON The SOT-223 Package Can Be Soldered Using Wave or Reflow. HIGH CURRENT SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. TRANSISTOR The formed leads absorb thermal stress during soldering, eliminating SURFACE MOUNT the possibility of damage to the die. NPN Complement is BCP68 COLLECTOR 2,4 AEC-Q101 Qualified and PPAP Capable NSV Prefix for Automotive and Other Applications Requiring BASE Unique Site and Control Change Req