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pzta92t1.pdf Principales características:

PZTA92T1 High Voltage Transistor PNP Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com Compliant SOT-223 PACKAGE MAXIMUM RATINGS (TC = 25 C unless otherwise noted) PNP SILICON Rating Symbol Value Unit HIGH VOLTAGE TRANSISTOR Collector-Emitter Voltage VCEO -300 Vdc SURFACE MOUNT Collector-Base Voltage VCBO -300 Vdc Emitter-Base Voltage VEBO -5.0 Vdc COLLECTOR 2,4 Collector Current IC -500 mAdc BASE Total Power Dissipation PD 1.5 1 up to @ TA = 25 C (Note 1) W Storage Temperature Range Tstg -65 to 150 C EMITTER 3 Junction Temperature TJ 150 C THERMAL CHARACTERISTICS MARKING 4 Characteristic Symbol Max Unit DIAGRAM 1 Thermal Resistance, RqJA 83.3 C/W 2 3 Junction-to-Ambient (Note 1) SOT-223 Stresses exceeding Maximum Ratings may damage the device. Maximum AYW P2DG Ratings are stress ratings onl

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