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2sc1215 e.pdf Principales características:

2sc1215_e2sc1215_e

Transistor 2SC1215 Silicon NPN epitaxial planer type For high-frequency (VHF band) amplification and oscillation Unit mm 5.0 0.2 4.0 0.2 Features High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 30 V 1.27 1.27 Collector to emitter voltage VCEO 20 V Emitter to base voltage VEBO 3 V Collector current IC 50 mA 1 2 3 1 Emitter Collector power dissipation PC 400 mW 2 Collector 3 Base 2.54 0.15 Junction temperature Tj 150 C JEDEC TO 92 Storage temperature Tstg 55 +150 C EIAJ SC 43A Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector to base voltage VCBO IC =100 A, IE = 0 30 V Emitter to base voltage VEBO IE = 10 A, IC = 0 3 V Forward current transfer ratio hFE VCB = 10V, IE = 2mA 25

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1215 e.pdf Design, MOSFET, Power

 2sc1215 e.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1215 e.pdf Database, Innovation, IC, Electricity

 

 
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