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2sc1317 2sc1318.pdf Principales características:

2sc1317_2sc13182sc1317_2sc1318

Transistors 2SC1317, 2SC1318 Silicon NPN epitaxial planer type Unit mm For low-frequency power amplification and driver amplification 5.0 0.2 4.0 0.2 Complementary to 2SA719 and 2SA720 Features 0.7 0.1 Low collector to emitter saturation voltage VCE(sat) Complementary pair with 2SA719 and 2SA720 Absolute Maximum Ratings Ta = 25 C Parameter Symbol Rating Unit 0.45+0.15 0.1 0.45+0.15 0.1 2SC1317 VCBO 30 V (1.27) (1.27) Collector to base voltage 2SC1318 60 1 Emitter 1 3 2 2SC1317 VCEO 25 V Collector to 2 Collector emitter voltage 3 Base 2SC1318 50 2.54 0.15 TO-92 Package Emitter to base voltage VEBO 7V Peak collector current ICP 1A Collector current IC 500 mA Collector power dissipation PC 625 mW Junction temperature Tj 150 C Storage temperature Tstg -55 to +150 C Electrical Characteristics Ta = 25 C 3 C Parameter Sym

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1317 2sc1318.pdf Design, MOSFET, Power

 2sc1317 2sc1318.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sc1317 2sc1318.pdf Database, Innovation, IC, Electricity

 

 
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