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2sc1318a e.pdf Principales características:

2sc1318a_e2sc1318a_e

Transistor 2SC1318A Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA720A 5.0 0.2 4.0 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. Absolute Maximum Ratings (Ta=25 C) +0.2 +0.2 Parameter Symbol Ratings Unit 0.45 0.1 0.45 0.1 Collector to base voltage VCBO 80 V 1.27 1.27 Collector to emitter voltage VCEO 70 V Emitter to base voltage VEBO 5 V 1 2 3 1 Emitter Peak collector current ICP 1 A 2 Collector Collector current IC 0.5 A 3 Base 2.54 0.15 JEDEC TO 92 Collector power dissipation PC 750 mW EIAJ SC 43A Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, I

 

Keywords - ALL TRANSISTORS. Principales características

 2sc1318a e.pdf Design, MOSFET, Power

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