2sc1360 e.pdf datasheet:

Transistor 2SC1360, 2SC1360A Silicon NPN epitaxial planer type For intermadiate frequency amplification of TV image Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Large collector power dissipation PC. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1360 50 VCBO V base voltage 2SC1360A 60 Collector to 2SC1360 45 VCEO V +0.2 +0.2 emitter voltage 2SC1360A 60 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to base voltage VEBO 4 V 1 Emitter Collector current IC 50 mA 2 Collector 1 2 3 3 Base Collector power dissipation PC 1 W EIAJ SC 51 Junction temperature Tj 150 C TO 92L Package Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector cutoff current ICBO VCB = 20V, IE = 0 100 nA Collector to base 2SC136