2sc1383 2sc1384.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sc1383 2sc1384.pdf Principales características:

Transistor 2SC1383, 2SC1384 Silicon NPN epitaxial planer type For low-frequency power amplification and driver amplification Unit mm Complementary to 2SA683 and 2SA684 5.9 0.2 4.9 0.2 Features Low collector to emitter saturation voltage VCE(sat). Complementary pair with 2SA683 and 2SA684. 0.7 0.1 Absolute Maximum Ratings (Ta=25 C) 2.54 0.15 Parameter Symbol Ratings Unit Collector to 2SC1383 30 VCBO V base voltage 2SC1384 60 Collector to 2SC1383 25 VCEO V +0.2 +0.2 emitter voltage 2SC1384 50 0.45 0.1 0.45 0.1 1.27 1.27 Emitter to base voltage VEBO 5 V 1 Emitter Peak collector current ICP 1.5 A 2 Collector 1 2 3 3 Base Collector current IC 1 A EIAJ SC 51 Collector power dissipation PC 1 W TO 92L Package Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Condi