2sc1473 e.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sc1473 e.pdf Principales características:

Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification Unit mm 2SC1473 complementary to 2SA1018 5.0 0.2 4.0 0.2 2SC1473A complementary to 2SA1767 Features High collector to emitter voltage VCEO. High transition frequency fT. Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit +0.2 +0.2 0.45 0.1 0.45 0.1 Collector to 2SC1473 250 1.27 1.27 VCBO V base voltage 2SC1473A 300 Collector to 2SC1473 200 VCEO V 1 2 3 1 Emitter emitter voltage 2SC1473A 300 2 Collector 3 Base Emitter to base voltage VEBO 7 V 2.54 0.15 JEDEC TO 92 Peak collector current ICP 100 mA EIAJ SC 43A Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit