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2sd1211.pdf Principales características:

2sd12112sd1211

Transistor 2SD1211 Silicon NPN epitaxial planer type For low-frequency amplification Unit mm Complementary to 2SB987 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver-stage of a low-frequency and 40 to 60W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 120 V Collector to emitter voltage VCEO 120 V +0.2 +0.2 0.45 0.1 0.45 0.1 Emitter to base voltage VEBO 5 V 1.27 1.27 1 Emitter Peak collector current ICP 1 A 2 Collector 1 2 3 3 Base Collector current IC 0.5 A EIAJ SC 51 Collector power dissipation PC 1 W TO 92L Package Junction temperature Tj 150 C Storage temperature Tstg 55 +150 C Electrical Characteristics (Ta=25 C) Parameter Symbol Conditions min typ max Unit Collector to emitter voltage VCEO IC = 0.1

 

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