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2sd1263.pdf Principales características:

Power Transistors 2SD1263, 2SD1263A Silicon NPN triple diffusion planar type For power amplification Unit mm Features 10.0 0.2 4.2 0.2 High collector to base voltage VCBO 5.5 0.2 2.7 0.2 Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Ratings Unit Collector to 2SD1263 350 1.3 0.2 1.4 0.1 VCBO V base voltage 2SD1263A 400 +0.2 0.5 0.1 Collector to 2SD1263 250 0.8 0.1 VCEO V emitter voltage 2SD1263A 300 2.54 0.25 Emitter to base voltage VEBO 5 V Peak collector current ICP 1.5 A 5.08 0.5 1 2 3 Collector current IC 0.75 A 1 Base Collector power TC=25 C 35 2 Collector PC W 3 Emitter dissipation Ta=25 C 2 TO 220 Full Pack Package(a) Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Electrical Characteristics (TC

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