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2sd1267.pdf Principales características:

Power Transistors 2SD1267, 2SD1267A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB942 and 2SB942A Unit mm Features 10.0 0.2 4.2 0.2 High forward current transfer ratio hFE which has satisfactory linearity 5.5 0.2 2.7 0.2 Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 3.1 0.1 Absolute Maximum Ratings (TC=25 C) Parameter Symbol Ratings Unit 1.3 0.2 Collector to 2SD1267 60 1.4 0.1 VCBO V base voltage 2SD1267A 80 +0.2 0.5 0.1 0.8 0.1 Collector to 2SD1267 60 VCEO V emitter voltage 2SD1267A 80 2.54 0.25 Emitter to base voltage VEBO 5 V 5.08 0.5 Peak collector current ICP 8 A 1 2 3 Collector current IC 4 A 1 Base 2 Collector Collector power TC=25 C 40 3 Emitter PC W dissipation Ta=25 C 2 TO 220 Full Pack

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