2sd1511 e.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2sd1511 e.pdf Principales características:

Transistor 2SD1511 Silicon NPN epitaxial planer type darlington Unit mm For low-frequency output amplification 1.5 0.1 4.5 0.1 1.6 0.2 Features Forward current transfer ratio hFE is designed high, which is ap- propriate to the driver circuit of motors and printer bammer hFE 45 = 4000 to 2000. A shunt resistor is omitted from the driver. 0.4 0.08 0.4 0.04 Mini Power type package, allowing downsizing of the equipment 0.5 0.08 1.5 0.1 and automatic insertion through the tape packing and the maga- 3.0 0.15 zine packing. 3 2 1 Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 80 V 1 Base 2 Collector EIAJ SC 62 Emitter to base voltage VEBO 5 V 3 Emitter Mini Power Type Package Peak collector current ICP 1.5 A Marking symbol P Collector curr