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2sd2413.pdf Principales características:

2sd24132sd2413

Transistor 2SD2413 Silicon NPN triple diffusion planer type For low-frequency output amplification Unit mm 1.5 0.1 4.5 0.1 1.6 0.2 Features High collector to base voltage VCBO. High collector to emitter voltage VCEO. 45 Large collector power dissipation PC. Low collector to emitter saturation voltage VCE(sat). 0.4 0.08 Mini Power type package, allowing downsizing of the equipment 0.4 0.04 0.5 0.08 and automatic insertion through the tape packing and the maga- 1.5 0.1 3.0 0.15 zine packing. 3 2 1 Absolute Maximum Ratings (Ta=25 C) marking Parameter Symbol Ratings Unit Collector to base voltage VCBO 400 V 1 Base Collector to emitter voltage VCEO 400 V 2 Collector EIAJ SC 62 3 Emitter Mini Power Type Package Emitter to base voltage VEBO 5 V Peak collector current ICP 200 mA Marking symbol 1S Collector current IC 100 mA Collector

 

Keywords - ALL TRANSISTORS. Principales características

 2sd2413.pdf Design, MOSFET, Power

 2sd2413.pdf RoHS Compliant, Service, Triacs, Semiconductor

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