2n7002-03.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n7002-03.pdf Principales características:

2N7002 N-channel enhancement mode field-effect transistor Rev. 03 27 July 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability 2N7002 in SOT23. 2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount package. 3. Applications Relay driver High speed line driver c c Logic level translator. 4. Pinning information Table 1 Pinning - SOT23, simplified outline and symbol Pin Description Simplified outline Symbol 1 gate (g) 3 d 2 source (s) 3 drain (d) g 03ab44 03ab30 s 12 SOT23 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. 2N7002 Philips Semiconductors N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2 Quick reference