2n7002.pdf Principales características. ALL TRANSISTORS. POWER MOSFET, IGBT, IC, TRIACS DATABASE

2n7002.pdf Principales características:

2N7002 N-channel TrenchMOS FET Rev. 06 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed line driver 1.4 Quick reference data VDS 60 V ID 300 mA RDSon 5 Ptot 0.83 W 2. Pinning information Table 1 Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 mbb076 S SOT23 2N7002 Philips Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2 Ordering information Type number Package Name Description Version 2N7002 TO-236AB plastic surface mounted package; 3 leads SOT23 4. Limiting valu