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2N7002E N-channel TrenchMOS FET Rev. 03 28 April 2006 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Logic level threshold compatible Very fast switching Surface-mounted package TrenchMOS technology 1.3 Applications Logic level translator High-speed line driver 1.4 Quick reference data VDS 60 V ID 385 mA RDSon 3 Ptot 0.83 W 2. Pinning information Table 1 Pinning Pin Description Simplified outline Symbol 1 gate (G) 3 D 2 source (S) 3 drain (D) G 12 mbb076 S SOT23 2N7002E Philips Semiconductors N-channel TrenchMOS FET 3. Ordering information Table 2 Ordering information Type number Package Name Description Version 2N7002E TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Limiting v

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