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bc635 bc637 bc639 3.pdf Principales características:

bc635_bc637_bc639_3bc635_bc637_bc639_3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC635; BC637; BC639 NPN medium power transistors 1999 Apr 23 Product specification Supersedes data of 1997 Mar 12 Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 FEATURES PINNING High current (max. 1 A) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter Driver stages of audio/video amplifiers. DESCRIPTION 1 handbook, halfpage 2 2 NPN transistor in a TO-92; SOT54 plastic package. 3 PNP complements BC636, BC638 and BC640. 1 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter BC635 - 45 V BC637 - 60 V BC639 - 100 V VCEO collector-em

 

Keywords - ALL TRANSISTORS. Principales características

 bc635 bc637 bc639 3.pdf Design, MOSFET, Power

 bc635 bc637 bc639 3.pdf RoHS Compliant, Service, Triacs, Semiconductor

 bc635 bc637 bc639 3.pdf Database, Innovation, IC, Electricity

 

 
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