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PH2625L N-channel TrenchMOS logic level FET Rev. 02 24 February 2005 Preliminary data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. 1.2 Features Optimized for use in DC-to-DC Very low switching and conduction converters losses Low threshold voltage Low thermal resistance. 1.3 Applications DC-to-DC converters Switched-mode power supplies Voltage regulators Notebook computers. 1.4 Quick reference data VDS 25 V ID 100 A Qgd = 7.3 nC (typ) Qg(tot) = 32 nC (typ) RDSon 2.8 m (VGS =10V) RDSon 4.1 m (VGS = 4.5 V). 2. Pinning information Table 1 Pinning Pin Description Simplified outline Symbol 1, 2, 3 source D 4 gate mb mb mounting base; connected to drain G mbb076 S 1 2 3 4 SOT669 (LFPAK) PH2625L Phili

 

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 ph2625l.pdf Design, MOSFET, Power

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