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Philips Semiconductors Product Specification PowerMOS transistor PHP12N10E GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope. The device is VDS Drain-source voltage 100 V intended for use in Switched Mode ID Drain current (DC) 14 A Power Supplies (SMPS), motor Ptot Total power dissipation 75 W control, welding, DC/DC and AC/DC Tj Junction temperature 175 C converters, and in general purpose RDS(ON) Drain-source on-state resistance 0.16 switching applications. PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION d tab 1 gate 2 drain g 3 source tab drain 1 2 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS Drain-source voltage - - 100 V VDGR Drain-gate voltage RGS

 

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