Todos los transistores

2sj217.pdf Principales características:

2SJ217 Silicon P Channel MOS FET REJ03G0850-0200 (Previous NON-084) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 6 2SJ217 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 45 A D Drain peak current I Note 1 180 A D (pulse) Body to drain diode reverse drain current I 45 A DR Channel dissipation Pch Note 2 150 W Channel temperature Tch 150 C

Keywords - ALL TRANSISTORS. Principales características

 2sj217.pdf Design, MOSFET, Power

 2sj217.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj217.pdf Database, Innovation, IC, Electricity