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2sj387.pdf Principales características:

2SJ387(L), 2SJ387(S) Silicon P Channel MOS FET REJ03G0862-0200 (Previous ADE-208-1196) Rev.2.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC-DC converter Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 4 D 1. Gate 1 2 2. Drain G 3 3. Source 4. Drain 1 2 3 S Rev.2.00 Sep 07, 2005 page 1 of 7 2SJ387(L), 2SJ387(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 20 V DSS Gate to source voltage V 10 V GSS Drain current I 10 A D Drain peak current I Note 1 40 A D (pulse) Body to drain diode reverse drain current I 10 A DR Channel di

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