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2sj4512sj451

2SJ451 Silicon P Channel MOS FET REJ03G0864-0400 Rev.4.00 Sep 07, 2007 Description Low frequency power switching Features Low on-resistance. Low drive power 2.5 V gate drive device. Small package (MPAK). Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) D 3 1. Source G 2. Gate 1 3. Drain 2 S Note Marking is ZK . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage VDSS 20 V Gate to source voltage VGSS 20 V Drain current ID 0.2 A Drain peak current ID (pulse) Note 1 0.4 A Channel dissipation Pch 150 mW Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Note 1. PW 10 s, duty cycle 1% REJ03G864-0400 Rev.4.00 Sep 07, 2007 Page 1 of 6 2SJ451 Electrical Characteristics (Ta = 25 C) Item Symbol Min Typ Max Unit

 

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 2sj451.pdf Design, MOSFET, Power

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