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2sj530.pdf Principales características:

2sj5302sj530

2SJ530(L), 2SJ530(S) Silicon P Channel MOS FET REJ03G0880-0500 (Previous ADE-208-655C) Rev.5.00 Sep 07, 2005 Description High speed power switching Features Low on-resistance RDS (on) = 0.08 typ. 4 V gate drive devices. High speed switching. Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK (L)-(2) ) (Package name DPAK (S) ) 4 4 D 1. Gate 1 2 2. Drain G 3 3. Source 4. Drain 1 2 3 S Rev.5.00 Sep 07, 2005 page 1 of 8 2SJ530(L), 2SJ530(S) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Value Unit Drain to source voltage V 60 V DSS Gate to source voltage V 20 V GSS Drain current I 15 A D Drain peak current I Note 1 60 A D (pulse) Body to drain diode reverse drain current I 15 A DR Avalanche current I Note 3 15 A AP Avalanche energy E Note 3

 

Keywords - ALL TRANSISTORS. Principales características

 2sj530.pdf Design, MOSFET, Power

 2sj530.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj530.pdf Database, Innovation, IC, Electricity

 

 
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