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r07ds0295ej rqj0303pgd.pdf Principales características:

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Preliminary Datasheet RQJ0303PGDQA R07DS0295EJ0500 (Previous REJ03G1272-0400) Silicon P Channel MOS FET Rev.5.00 Power Switching Mar 28, 2011 Features Low on-resistance RDS(on) = 54 m typ (VGS = 10 V, ID = 1.6 A) Low drive current High speed switching 4.5 V gate drive Outline RENESAS Package code PLSP0003ZB-A (Package name MPAK) 3 D 3 G 1. Source 2 2. Gate 1 3. Drain 2 S 1 Note Marking is PG . Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS +10 / 20 V Drain current ID 3.3 A Drain peak current ID(Pulse) Note1 5 A Body - drain diode reverse drain current IDR 3.3 A Channel dissipation Pch Note2 0.8 W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes 1. PW 10 s, duty cycle

 

Keywords - ALL TRANSISTORS. Principales características

 r07ds0295ej rqj0303pgd.pdf Design, MOSFET, Power

 r07ds0295ej rqj0303pgd.pdf RoHS Compliant, Service, Triacs, Semiconductor

 r07ds0295ej rqj0303pgd.pdf Database, Innovation, IC, Electricity

 

 
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