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us5u30.pdf Principales características:

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US5U30 Transistor 2.5V Drive Pch+SBD MOSFET US5U30 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U30 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-state resistance with fast switching. 3) Low voltage drive(2.5V) 4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol U30 Applications Load switch, DC/DC conversion Packaging specifications Equivalent circuit Package Taping (5) (4) Code TR Type Basic ordering unit (pieces) 3000 2 US5U30 1 (1)Gate (2)Source (1) (2) (3) (3)Anode (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode Rev.B 1/4 0.2Max. US5U30 Transistor Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-source voltage V V DSS -20 Gate-so

 

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