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US5U38 Transistor 2.5V Drive Pch+SBD MOSFET US5U38 Dimensions (Unit mm) Structure Silicon P-channel MOSFET TUMT5 Schottky Barrier DIODE 2.0 1.3 Features 1) The US5U38 combines Pch MOSFET with a Schottky barrier diode in a TUMT5 package. 2) Low on-resistance with fast switching. 3) Low voltage drive (2.5V). 4) Built-in schottky barrier diode has low forward voltage. Abbreviated symbol U38 Equivalent circuit Applications (5) (4) Switching 2 Packaging specifications Package Taping Code TR Type 1 (1)Gate Basic ordering unit (pieces) 3000 (2)Source (1) (2) (3) (3)Anode US5U38 (4)Cathode 1 ESD protection diode (5)Drain 2 Body diode Absolute maximum ratings (Ta=25 C) Parameter Symbol Limits Unit Drain-source voltage V V DSS -20 Gate-source voltage V V GSS 12 Continuous I 1.0 A D Drain current

 

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