ru7088a.pdf Principales características:
RU7088A N-Channel Advanced Power MOSFET MOSFET Features Pin Description 65V/88A, RDS (ON) =6m (Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested TO-220 Lead Free and Green Devices Available (RoHS Compliant) Applications The device is suitable for use in PWM ,load switching and general purpose applications. N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TC=25 C Unless Otherwise Noted) 65 VDSS Drain-Source Voltage V 25 VGSS Gate-Source Voltage C TJ 175 Maximum Junction Temperature C TSTG Storage Temperature Range -55 to 175 IS Diode Continuous Forward Current TC=25 C A 88 Mounted on Large Heat Sink IDP 300 s Pulse Drain Current Tested TC=25 C A 352 TC=25 C 88 ID Continuous Drain Current(VGS=10V) A TC=100 C 66 125
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