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ssf8n90a.pdf Principales características:

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.6 Rugged Gate Oxide Technology Lower Input Capacitance ID = 5.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 900V Low RDS(ON) 1.247 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 Continuous Drain Current (TC=25 ) 5.5 ID A Continuous Drain Current (TC=100 ) 3.5 1 IDM Drain Current-Pulsed A O 32 _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 801 1 IAR Avalanche Current O 5.5 A EAR Repetitive Avalanche Energy 1 9.5 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O Total Power Dissipation (TC=25 ) 95 W PD Linear Derating Factor W/ 0.76 Operating Junction a

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