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ssh25n40a.pdf Principales características:

ssh25n40assh25n40a

SSH25N40A Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = 25 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.162 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 400 Continuous Drain Current (TC=25 C) 25 ID A Continuous Drain Current (TC=100 C ) 15.1 IDM Drain Current-Pulsed 1 O 100 A + VGS Gate-to-Source Voltage 2 _ V 30 O EAS Single Pulsed Avalanche Energy 1429 mJ IAR Avalanche Current 1 O 25 A 1 EAR Repetitive Avalanche Energy mJ O 27.8 3 dv/dt Peak Diode Recovery dv/dt O 4.0 V/ns Total Power Dissipation (TC=25 C) W 278 PD Linear Derating Factor 2.2

 

Keywords - ALL TRANSISTORS. Principales características

 ssh25n40a.pdf Design, MOSFET, Power

 ssh25n40a.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ssh25n40a.pdf Database, Innovation, IC, Electricity

 

 

 


 
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