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2sb815 2sd1048.pdf Principales características:

2sb815_2sd10482sb815_2sd1048

Ordering number ENN694F 2SB815 / 2SD1048 PNP / NPN Epitaxial Planar Silicon Transistors 2SB815 / 2SD1048 General-Purpose AF Amplifier Applications Features Package Dimensions Ultrasmall package allows miniaturization unit mm in end products. 2018B Large current capacity (IC=0.7A) and low-saturation [2SB815 / 2SD1048] voltage. 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 1 Base 2.9 2 Emitter 3 Collector Specifications SANYO CP ( ) 2SB815 Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--)20 V Collector-to-Emitter Voltage VCEO (--)15 V Emitter-to-Base Voltage VEBO (--)5 V Collector Current IC (--)0.7 A Collector Current (Pulse) ICP (--)1.5 A Collector Dissipation PC 200 mW Junction Temperature Tj 125 C Storage Temperature Tstg --55 to +125 C Electrical Characteristics at

 

Keywords - ALL TRANSISTORS. Principales características

 2sb815 2sd1048.pdf Design, MOSFET, Power

 2sb815 2sd1048.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sb815 2sd1048.pdf Database, Innovation, IC, Electricity

 

 
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