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2sc4256.pdf Principales características:

Ordering number EN2924A NPN Triple Diffused Planar Silicon Transistor 2SC4256 1200V/10mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions High breakdown voltage. unit mm Small Cob. 2010C Wide ASO. [2SC4256] High reliability (Adoption of HVP process). 10.2 4.5 3.6 5.1 1.3 1.2 0.8 1 Base 0.4 2 Collector 1 2 3 3 Emitter JEDEC TO-220AB 2.55 2.55 EIAJ SC-46 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 1200 V Emitter-to-Base Voltage VEBO 5 V Collector Current IC 10 mA Collector Current (Pulse) ICP 30 mA Collector Dissipation PC 1.75 W Junction Temperature Tj 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter S

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