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2sc4293.pdf Principales características:

Ordering number EN2963 NPN Triple Diffused Planar Silicon Transistor 2SC4293 Ultrahigh-Definition Color Display Horizontal Deflection Output Applications Features Package Dimensions High speed (tf=300ns max). unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (adoption of HVP process). [2SC4293] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6 1 Base 1 2 3 2 Collector 3 Emitter 5.45 5.45 SANYO TO-3PML Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 1500 V Collector-to-Emitter Voltage VCEO 800 V Emitter-to-Base Voltage VEBO 7 V Collector Current IC 5 A Collector Current (Pulse) ICP 16 A Collector Dissipation PC 3.0 W Tc=25 C 50 W Junction Temperature Tj 150 C Storage Temperature Tstg 55

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