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2sc6097.pdf Principales características:

Ordering number ENA0412 2SC6097 NPN Epitaxial Planar Silicon Transistor 2SC6097 High-Current Switching Applications Applications DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 100 V Collector-to-Emitter Voltage VCES 100 V Collector-to-Emitter Voltage VCEO 60 V Emitter-to-Base Voltage VEBO 6.5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 600 mA 0.8 W Collector Dissipation PC Tc=25 C15 W Junction Temperature Tj 150 C Storage Temperature Tstg --55 to +150 C Electrical Characteristics at

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