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2sj231.pdf Principales características:

Ordering number EN3816 P-Channel Silicon MOSFET 2SJ231 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2087A Low-voltage drive. [2SJ231] 2.5 Meets radial taping. 1.45 6.9 1.0 0.6 0.9 0.5 1 2 3 0.45 1 Source 2 Drain 3 Gate 2.54 2.54 SANYO NMP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS 15 V Drain Current (DC) ID 0.5 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 2 A Allowable Power Dissipation PD 1 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V(BR)DSS ID= 1mA,

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