Todos los transistores

 

2sj419.pdf Principales características:

2sj4192sj419

Ordering number EN5313A P-Channel Silicon MOSFET 2SJ419 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2116 2.5V drive. [2SJ419] 8 5 1 Source 2 Source 3 Source 14 0.2 4 Gate 5.0 5 Drain 6 Drain 7 Drain 8 Drain 0.595 1.27 0.43 SANYO SOP8 Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 12 V Gate-to-Source Voltage VGSS 10 V Drain Current (DC) ID 4 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 32 A Allowable Power Dissipation PD Mounted on ceramic board (1200mm2 0.8mm) 2.0 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Characteristics at Ta = 25 C Ratings Parameter Symbol Conditions Unit min typ max Drain-

 

Keywords - ALL TRANSISTORS. Principales características

 2sj419.pdf Design, MOSFET, Power

 2sj419.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj419.pdf Database, Innovation, IC, Electricity

 

 

 


 
↑ Back to Top
.