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2sj466.pdf Principales características:

2sj4662sj466

Ordering number ENN5491B P-Channel Silicon MOSFET 2SJ466 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON resistance. unit mm Ultrahigh-speed switching. 2128 4V drive. [2SJ466] Enables simplified fabrication, high-density mount- 8.2 7.8 ing, and miniaturization in end products due to the 6.2 0.6 3 surface mountable package. 1 2 0.3 1.0 1.0 0.6 2.54 2.54 5.08 7.8 10.0 6.0 1 Gate 2 Source 3 Drain SANYO ZP Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGSS 20 V Drain Current (DC) ID 35 A Drain Current (Pulse) IDP PW 10 s, duty cycle 1% 140 A Allowable Power Dissipation PD Tc=25 C 50 W Channel Temperature Tch 150 C Storage Temperature Tstg 55 to +150 C Electrical Cha

 

Keywords - ALL TRANSISTORS. Principales características

 2sj466.pdf Design, MOSFET, Power

 2sj466.pdf RoHS Compliant, Service, Triacs, Semiconductor

 2sj466.pdf Database, Innovation, IC, Electricity

 

 
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